Overview
Description
The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
- Isolated package
- Trench gate and thin wafer technology (G7H series)
- High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 20A, Rg = 10Ω, Ta = 25 °C, Inductive load)
- Operation frequency (20kHz ≤ f ˂ 100kHz)
- Not guarantee short circuit withstand time
Comparison
Applications
Design & Development
Product Options
Applied Filters: