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1Mb Advanced LPSRAM (128k word x 8bit)

Package Information

Pkg. Code pkg_11797
Lead Count (#) 32
Pkg. Type TSOP(32)
Pkg. Dimensions (mm) 18.4 x 8 x 1.2

Environmental & Export Classifications

Moisture Sensitivity Level (MSL) 3
ECCN (US) EAR99
HTS (US) 85423245000
RoHS (R1LP0108ESF-5SI#S1) EnglishJapanese
Pb (Lead) Free Yes

Product Attributes

Carrier Type Embossed Tape
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 3.52933
Access Time (ns) 55
Density (Kb) 1000
Lead Compliant Yes
Lead Count (#) 32
Length (mm) 18
Longevity 2031 Mar
MOQ 1000
Memory Capacity (kbit) 1000
Memory Density 1M
Organization 128K x 8
Organization (bit) x 8
Organization (kword) 128
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 8 x 1.2
Pkg. Type TSOP(32)
Remarks Dual Chip Select (CS1#, CS2)
Replacement Remark consolidation of part-names and/or assembly material change
Supply Voltage (V) 4.5 - 5.5
Tape & Reel No
Temp. Range -40 to +85°C
Thickness (mm) 1.2
Width (mm) 8

Description

The R1LP0108E is a low-voltage 1-Mbit static RAM organized as 131, 072-word by 8-bit, fabricated by Renesas' high-performance 0.15µm CMOS and TFT technologies. The R1LP0108E realizes higher density, higher performance, and low-power consumption. The device is suitable for memory applications where simple interfacing, battery operation, and battery backup are the important design objectives. It has been packaged in a 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.