Pkg. Code | pkg_659 |
Lead Count (#) | 28 |
Pkg. Type | TSOP(1) |
Pkg. Dimensions (mm) | 11.8 x 8 x 1.2 |
ECCN (US) | EAR99 |
RoHS (R1EV58064BTCRBI#B2) | EnglishJapanese |
Moisture Sensitivity Level (MSL) | 3 |
Pb (Lead) Free | Yes |
HTS (US) |
Carrier Type | Tray |
Access Time (ns) | 100 |
Application | Consumer/Industrial |
Family Name | Parallel EEPROM |
Interface | Parallel |
Lead Compliant | Yes |
Lead Count (#) | 28 |
Length (mm) | 12 |
MOQ | 1 |
Memory Capacity (kbit) | 64 |
Moisture Sensitivity Level (MSL) | 3 |
Organization (bit) | x 8 |
Organization (kword) | 8 |
Pb (Lead) Free | Yes |
Pkg. Dimensions (mm) | 12 x 8 x 1.2 |
Pkg. Type | TSOP(1) |
Remarks | with reset function |
Tape & Reel | No |
Thickness (mm) | 1.2 |
Width (mm) | 8 |
Support is limited to customers who have already adopted these products.
Renesas Electronics’ R1EV58064BxxN series and R1EV58064BxxR series are electrically erasable and programmable EEPROM’s organized as 8192-word 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.