Overview
Description
The TP65H050G4BS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050G4BS is offered in an industry-standard SMD TO-263 with a common source package configuration.
Features
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Enhanced inrush current capability
- Very low QRR
- Reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
- RoHS-compliant and Halogen-free packaging
Comparison
Applications
Design & Development
Software & Tools
Boards & Kits
Evaluation
TDTTP2500B066B-KIT
Not Recommended for New Designs
2.5kW Totem-pole PFC GaN Evaluation Platform
The TDTTP2500B066B 2.5kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high-efficiency single-phase AC-DC conversion. Using a dsPIC along with Renesas' GaN FETs in the fast-switching leg of the circuit and low-resistance MOSFETs in the slow-switching leg of...
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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