4kW Analog Control Bridgeless Totem-pole PFC GaN Evaluation Platform
Renesas' high-efficiency 4kW TDTTP4000W065AN evaluation board is designed for single-phase AC-to-DC power conversion up to 4kW. The board uses the bridgeless totem-pole...
The TP65H035G4WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using our GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.
Renesas' GaN power products offer improved efficiency over silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.
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Datasheet | PDF 1.21 MB | |
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Renesas' high-efficiency 4kW TDTTP4000W065AN evaluation board is designed for single-phase AC-to-DC power conversion up to 4kW. The board uses the bridgeless totem-pole...
The TDTTP4000W066B 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high-efficiency single-phase AC-DC conversion. Using GaN FETs...
The TDTTP4000W066C 4kW bridgeless totem-pole power factor correction (PFC) evaluation board achieves very high-efficiency single-phase AC-DC conversion. Using a dsPIC...
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