Overview
Description
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
Features
- 30mOhm, 650V GaN device in TO-247 package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Zero reverse recovery charge
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 912 KB | |
| Application Note | PDF 380 KB | |
| White Paper | PDF 1.92 MB | |
| Other | ZIP 283 KB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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Videos & Training
Gen IV Plus 650V SuperGaN FETs
The latest generation of high-voltage Gallium Nitride (GaN) FETs offers superior thermal efficiency and ultra-low power loss, enabling high-density power conversion in multi-kilowatt AI datacenters, industrial systems, and charging applications.
Related Resources
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