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Overview

Description

The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance Ciss = 5000 pF TYP.

Comparison

Applications

Documentation

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

Diagram of ECAD Models

Models

Type Title Date
Model - SPICE ZIP
1 item

Product Options

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