Overview
Description
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
- Low input capacitance Ciss = 5000 pF TYP.
Comparison
Applications
Design & Development
Product Options
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