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Radiation Hardened High Frequency Half Bridge Drivers

Package Information

Pkg. Type DIE

Environmental & Export Classifications

Pb (Lead) Free No
RoHS (IS0-2100ARH-Q) EnglishJapanese
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type DIE
Qualification Level Class V
DLA SMD 5962F9953602V9A
Pb (Lead) Free No
MOQ 100
Temp. Range -55 to +125°C
CAGE code 34371
Bus Voltage (Max) (V) 130
DSEE (MeV·cm2/mg) 90
Die Sale Availability? Yes
Driver Type Half Bridge
Drivers (#) 1
FET Type MOSFET
Fall Time 60
Flow RH Hermetic
High Side Fall Time (max) (ns) 40
High Side Rise Time (max) (ns) 40
Input VCC (Max) (V) 20
Input VCC (Min) (V) 12
Lead Compliant No
Low Side Fall Time (max) (ns) 40
Low Side Rise Time (max) (ns) 40
Output Type Synchronous
PROTO Availability? Yes
Peak Output Current IPK (A) 1.5
Peak Output Sink Current (A) 1.5
Peak Output Source Current (A) 1.5
Rating Space
Rise Time (Max) 60
SMD URL
TID HDR (krad(Si)) 300
Tape & Reel No

Description

The radiation hardened IS-2100ARH, IS-2100AEH are high-frequency, 130V half-bridge N-Channel MOSFET driver ICs, which are functionally similar to industry-standard 2110 types. The low-side and high-side gate drivers are independently controlled. This gives the user maximum flexibility in dead time selection and driver protocol. In addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the HIN signal. If they disagree, a set or reset pulse is generated to correct the high-side latch. This feature protects the high-side latch from single event upsets (SEUs).