Skip to main content
Radiation Hardened CMOS Dual SPDT Analog Switch

Package Information

Pkg. Type DIE

Environmental & Export Classifications

Pb (Lead) Free No
Moisture Sensitivity Level (MSL)
ECCN (US)
HTS (US)

Product Attributes

Pkg. Type DIE
Pb (Lead) Free No
MOQ 5
Temp. Range -40 to +125°C
CAGE code 34371
Die Sale Availability? Yes
Flow RH Hermetic
Leakage Current (max, post-rad) (±nA) 100
PROTO Availability? Yes
Qualification Level EM
RON (max) (ohms) 70
Rating Space
Supply Current (max, post-rad) +150µA/-100µA
Supply Voltage (max) (V) 12 - 12
Supply Voltage (min) (V) -12 - -12
Supply Voltage of Specification Limits (±V) 12
Switches (#) 2
TID HDR (krad(Si)) 300
TID LDR (krad(Si)) 50
Turn-Off Time (max) (ns) 450
Turn-On Time (max) (ns) 500
rON (max, post-rad) (Ω) 70
tOFF (max, post-rad) (ns) 450
tON (max, post-rad) (ns) 500

Description

The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radiation. Break-before-make switching is controlled by 5V digital inputs. The HS-303ARH and HS-303AEH should be operated with nominal ±15V supplies, while the HS-303BRH and HS-303BEH should be operated with nominal ±12V supplies.