Renesas Electronics Corporation - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
Search

RJP1CS28DWS

Not Recommended for New DesignsNRND

IGBT 1250V 200A Sawn

Order Now
RJP1CS28DWA / RJP1CS28DWS(1250V - 200A - IGBT Application: Inverter)

Overview

The RJP1CS28DWS is a 1250V 200A trench insulated-gate bipolar transistor (IGBT) that is available in a Sawn wafer package type. 

  • Renesas generation 7th Trench IGBT
  • Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 200A, VGE = 15V, Tc = 25 °C)
  • Moderate speed switching
  • Short circuit withstands time (10μs min.)

Documentation

Featured Documentation
Type Title Date
Datasheet
RJP1CS28DWA / RJP1CS28DWS(1250V - 200A - IGBT Application: Inverter)
PDF 111 KB
Brochure
Analog ICs Brochure
PDF 5.41 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Application Note
TO-247plus Package
PDF 506 KB 日本語
Application Note
Usage Notes for Paralleled IGBT
PDF 941 KB 日本語
Application Note
IGBT Application Note
PDF 1.05 MB 日本語
Brochure
Renesas Semiconductor Lead-Free Packages
PDF 1.32 MB
7 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

Explore ECAD Models
Diagram of ECAD Models

Product Options

Applied Filters: