Overview
Description
The RJP1CS26DWA 1250V, 100A, insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage and can be used for inverter applications. It is available in an Unsawn wafer package type.
Features
- Renesas generation 7th Trench IGBT
- Low collector to emitter saturation voltage VCE(sat) = 1.55V typ. (at IC = 100A, VGE = 15V, Tc = 25 °C)
- Moderate speed switching
- Short circuit withstands time (10μs min.)
Comparison
Applications
- Inverters
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 110 KB | |
| Brochure | PDF 5.41 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
| Application Note | PDF 506 KB 日本語 | |
| Application Note | PDF 941 KB 日本語 | |
| Application Note | PDF 1.05 MB 日本語 | |
| Brochure | PDF 1.32 MB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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