Overview
Description
The RJH60T04DPQ-A1 600V, 30A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for current resonance circuit applications. It is available in a TO-247A package type.
Features
- Optimized for current resonance application
- Low collector to emitter saturation voltage VCE(sat) = 1.5V typ. (at IC = 30A, VGE = 15V, Ta = 25 °C)
- Built-in fast recovery diode in one package
- Trench gate and thin wafer technology
- High-Speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 30A, Rg = 10Ω, Ta = 25 °C, Inductive load)
- Low tail loss Etail = 160μJ typ. (at VCC = 300V, VGE = 20V, IC = 50A, Rg = 15Ω, Tc = 125 °C, current resonance circuit)
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 185 KB | |
| Brochure | PDF 5.41 MB 日本語 | |
| Application Note | PDF 648 KB 日本語 | |
| Application Note | PDF 506 KB 日本語 | |
| Application Note | PDF 941 KB 日本語 | |
| Application Note | PDF 1.05 MB 日本語 | |
| Brochure | PDF 1.32 MB | |
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