| Lead Count (#) | 165 |
| Pkg. Code | BQ165 |
| Pitch (mm) | 1 |
| Pkg. Type | CABGA |
| Pkg. Dimensions (mm) | 15.0 x 13.0 x 1.2 |
| Pb (Lead) Free | No |
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | |
| HTS (US) |
| Lead Count (#) | 165 |
| Pb (Lead) Free | No |
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Price (USD) | 24.46007 |
| Architecture | Synch Burst |
| Bus Width (bits) | 18 |
| Core Voltage (V) | 3.3 |
| Density (Kb) | 9216 |
| I/O Voltage (V) | 3.3 - 3.3 |
| Length (mm) | 15 |
| MOQ | 136 |
| Organization | 512K x 18 |
| Output Type | Flowthrough |
| Package Area (mm²) | 195.0 |
| Pb Free Category | e0 |
| Pitch (mm) | 1 |
| Pkg. Dimensions (mm) | 15.0 x 13.0 x 1.2 |
| Pkg. Type | CABGA |
| Qty. per Carrier (#) | 136 |
| Qty. per Reel (#) | 0 |
| Requires Terms and Conditions | Does not require acceptance of Terms and Conditions |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to 85°C |
| Thickness (mm) | 1.2 |
| Width (mm) | 13 |
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.