Overview

Description

The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On chip latches are provided for addresses allowing efficient interfacing with microprocessor systems. The data output can be forced to a high impedance state for use in expanded memory arrays. Gated inputs allow lower operating current and also eliminates the need for pull up or pull down resistors. The HM-6514/883 is fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.

Features

  • This Circuit is Processed in Accordance to MIL-STD- 883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
  • Low Power Standby 125µW Max
  • Low Power Operation 35mW/MHz Max
  • Data Retention at 2.0V Min
  • TTL Compatible Input/Output
  • Common Data Input/Output
  • Three-State Output
  • Standard JEDEC Pinout
  • Fast Access Time 120/200ns Max
  • 18 Pin Package for High Density
  • Gated Inputs - No Pull Up or Pull Down Resistors Required
  • On-Chip Address Register

Documentation

Type
Date
PDF 342 KB Datasheet
PDF 4.85 MB Brochure
PDF 323 KB Product Change Notice
PDF 200 KB End Of Life Notice
PDF 282 KB Product Advisory
PDF 174 KB Product Change Notice
PDF 151 KB Product Change Notice
PDF 338 KB Application Note
PDF 224 KB Application Note
9 items

Design & Development

Software & Tools

Software Downloads

Type Date
PDF 200 KB End Of Life Notice
1 item

Models