Overview
Description
The RJH65T14DPQ-A0 650V, 50A trench insulated-gate bipolar transistor (IGBT) offers a low collector to emitter saturation voltage, built-in fast recovery diode (FRD), and can be used for induction heating and microwave oven applications. It is available in a TO-247A package type.
Features
- Optimized for current resonance application
- Low collector to emitter saturation voltage VCE(sat) = 1.45V typ. (at IC = 50A, VGE = 15V, Ta = 25 °C)
- Built-in fast recovery diode in one package
- Trench gate and thin wafer technology
Comparison
Applications
- Induction heating
- Microwave ovens
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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