The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0. 01nA.


  • High Gain-Bandwidth Product (fT) 10GHz
  • High Power Gain-Bandwidth Product 5GHz
  • High Current Gain (hFE) 70
  • Noise Figure (Transistor) 3.5dB
  • Low Collector Leakage Current <0.01nA
  • Excellent hFE and VBE Matching
  • Pin-to-Pin to UPA102G
  • Pb-Free Plus Anneal Available (RoHS Compliant)




  • Single Balanced Mixers
  • Wide Band Amplification Stages
  • Differential Amplifiers
  • Multipliers
  • Automatic Gain Control Circuits
  • Frequency Doublers, Tripplers
  • Oscillators
  • Constant Current Sources
  • Wireless Communication Systems
  • Radio and Satellite Communications
  • Fiber Optic Signal Processing
  • High Performance Instrumentation


Type Title Date
Datasheet PDF 462 KB
Training PDF 258 KB
Training PDF 325 KB
Price Increase Notice PDF 257 KB
Price Increase Notice PDF 227 KB
Product Change Notice PDF 152 KB
Application Note PDF 357 KB
Application Note PDF 253 KB
Application Note PDF 239 KB
Application Note PDF 299 KB
Application Note PDF 238 KB
Application Note PDF 207 KB
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Design & Development