Overview
Description
The RJP65T43DPM 650V, 20A trench insulated-gate bipolar transistor (IGBT) features a 150A collector peak current, offers through hole mounting, and comes in a TO-3PFM package.
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.8V typ. (at IC = 20A, VGE = 15V, Ta = 25 °C)
- Isolated package
- Trench gate and thin wafer technology (G7H series)
- High-speed switching tf = 45ns typ. (at VCC = 400V, VGE = 15V , IC = 20A, Rg = 10Ω, Ta = 25 °C, Inductive load)
- Operation frequency (20kHz ≤ f ˂ 100kHz)
- Not guarantee short circuit withstand time
Comparison
Applications
High speed switching
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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