Renesas is a leading dual-port SRAM (DPRAM) supplier, bringing systems design experience together with high-performance circuit and multiport SRAM technology expertise to define synchronous and asynchronous dual-port and four-port memory products.

The Renesas synchronous dual-port SRAM devices are memory devices with clocked inputs and outputs for data, address, and control functions. These DPRAMs provide simultaneous access to a single static SRAM memory location from two buses with full synchronous operation on both ports.

  • DPRAM increases bandwidth (~2x SRAM)
  • DPRAM offers shorter time-to-market than alternatives
  • DPRAM reduces design complexity

Renesas DPRAM products feature simultaneous access capability, with a number of arbitration techniques available to the designer to prevent contention and system wait states. Semaphore token passing, software arbitration, and on-chip hardware arbitration enable the designer to select the most efficient DPRAM for the application.

The Renesas dual-port SRAMs come in industry-standard packages both Green (6/6 RoHS Compliant) and standard, 2.5V to 5V I/O voltages, and commercial, industrial, and military grades. Renesas is continually working to reduce the cost of high-performance dual-port SRAM solutions and will continue to be the leading provider of dual-port SRAM in the semiconductor industry.

About Dual-Port SRAM (DPRAM)

Dual-port SRAM memory (also referred to as DPRAM) is a type of static random access memory that supports multiple, simultaneous reads or writes at different addresses within the memory. This is different than single-port memory which only allows one access at a time. The main benefit of this feature is higher performance since DPRAM allows for two memory cells to be read/written during each clock cycle instead of just one.

The transistor-level architecture of dual-port SRAM uses an eight-transistor basic memory cell, whereas single-port RAM uses a six-transistor basic memory cell. While this generally results in a larger die size, the Renesas synchronous SRAM solutions are optimized and offered in very compact packages.

Key parameters for choosing a dual-port SRAM include:

  • Memory density: This is the number of bits the DPRAM will hold in its memory. Renesas offers sizes up to 36Mb.
  • Bus width: The number of “lanes” used to read and write to the dual-port SRAM. Renesas offers all popular configurations.
  • I/O frequency: The supported frequencies for the clocking signals. Renesas supports frequencies up to 200MHz.
  • Output type: The method in which the memory data is output from the DPRAM. Renesas offers both flowthrough and pipelined options.
  • Core voltage: The supply voltage used to power the dual-port SRAM. This is typically defined by the power rails available in the system.
  • I/O voltage: The voltage used for the data input and output, for some devices this is separate from the core devices.

Documentation

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Guide
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Overview