Dual Path RF Switch / LNA DVGA - 3.3GHz to 4.0GHz
Overview
Description
The F0453C is an integrated dual-path RF front-end consisting of an RF switch and two gain stages with 6dB gain control used in the analog front-end receiver of an Active Antenna System (AAS).
The F0453C provides 35dB gain with +23dBm OIP3, +15dBm output P1dB, and 1.35dB noise figure at 3500MHz. Gain is reduced 6dB in a single step with a maximum gain settling time of 31ns. The device uses a single 3.3V supply and 130mA of IDD.
The F0453C is offered in a 6 × 6 × 0.8 mm, 32-pin LGA package with 50Ω input and output amplifier impedances for ease of integration into the signal path.
Features
- Gain at 3500MHz
- 35dB typical in High Gain Mode
- 29dB typical in Low Gain Mode
- 1.35dB NF at 3500MHz
- +23dBm OIP3 at 3500MHz
- OP1dB at 3500MHz
- +15dBm in High Gain Mode
- +14dBm in Low Gain Mode
- 50Ω single-ended input / output amplifier impedances
- IDD = 130mA
- Independent Standby Mode for power savings
- Supply voltage: +3.15V to +3.45V
- 6 × 6 mm, 32-pin LGA package
- -40°C to +105°C exposed pad operating temperature range
Applications
Design & Development
Software & Tools
Boards & Kits
Boards & Kits
Evaluation Board for F0453C RF DVGA
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Models
ECAD Models
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Product Options
play_circle_filledVideos & Training
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Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
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Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
