概要
説明
The RTDTTP4200W066A 4.2kW bridgeless totem-pole power factor correction (PFC) evaluation board enables highly efficient single-phase AC/DC conversion using the latest Renesas Gen IV Plus SuperGaN® FET. The TP65H030G4PWS is a diode-free Gallium Nitride (GaN) FET bridge with low reverse recovery charge.
特長
- Low-line and high-line input totem-pole PFC capability, supporting up to 4200W with a 385VDC output
- Switching Frequency: 66kHz
- High efficiency and low losses
- Cooled package temperature up to max power
- Over current and over voltage protection
- Pb-free available
アプリケーション
製品選択
適用されたフィルター
ビデオ&トレーニング
Gen IV Plus 650V SuperGaN FETs
The latest generation of high-voltage Gallium Nitride (GaN) FETs offers superior thermal efficiency and ultra-low power loss, enabling high-density power conversion in multi-kilowatt AI datacenters, industrial systems, and charging applications.
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