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Renesas' radiation hardened NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates.
High Dose Rate (HDR) (krad (Si)) |
Low Dose Rate (LDR) (krad (Si)) |
DSEE (SEL, SEB, etc.) (MeV*cm2/mg) |
DLA SMD |
Qualification Level |
|
---|---|---|---|---|---|
Part Number | |||||
CMOS Quad 2-Input NAND Gate with Open Drain | 300 | ELDRS free | SEL free | 5962F9670301V9A, 5962F9670301VCC, 5962F9670301VXC | QML Class V (space) |
CMOS Dual 2-Input NAND Buffer/Driver | 100 | ELDRS free | 75 | 5962R9664401VXC | QML Class V (space) |
CMOS NAND Gate | 100 | ELDRS free | 75 | 5962R9662103V9A, 5962R9662103VCC, 5962R9662103VXC | QML Class V (space) |
Quad 2-Input NAND Gate | 200 | 5962R9572401V9A, 5962R9572401VCC, 5962R9572401VXC | QML Class V (space) | ||
CMOS Dual 4-Input NAND Gate | 200 | ELDRS free | SEL free | 5962R9573301VXC | QML Class V (space) |
Document title | Document type Type | Date Date |
---|---|---|
PDF 467 KB | Brochure | |
PDF 4.85 MB | Brochure | |
PDF 338 KB | Application Note | |
PDF 224 KB | Application Note | |
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