Overview
Description
The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.
Features
- Drives N-Channel MOSFET Half Bridge
- SOIC, EPSOIC, and QFN Package Options
- SOIC and EPSOIC Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
- Pb-Free (RoHS Compliant)
- Bootstrap Supply Max Voltage to 114VDC
- On-Chip 1Ω Bootstrap Diode
- Fast Propagation Times for Multi-MHz Circuits
- Drives 1000pF Load with Rise and Fall Times Typ 10ns
- CMOS Input Thresholds for Improved Noise Immunity
- Independent Inputs for Non-Half Bridge Topologies
- No Start-Up Problems
- Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
- Low Power Consumption
- Wide Supply Range
- Supply Undervoltage Protection
- 3Ω Driver Output Resistance
- QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
Comparison
Applications
Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
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