Pitch (mm) | 2.54 |
Lead Count (#) | 16 |
Pkg. Type | SBDIP |
Pkg. Dimensions (mm) | 20.32 x 7.49 x 2.41 |
Pkg. Code | DBB |
Moisture Sensitivity Level (MSL) | Not Applicable |
Pb (Lead) Free | Exempt |
ECCN (US) | 9A515 |
HTS (US) |
Pkg. Type | SBDIP |
Lead Count (#) | 16 |
Carrier Type | Tube |
Moisture Sensitivity Level (MSL) | Not Applicable |
Pitch (mm) | 2.5 |
Pkg. Dimensions (mm) | 20.3 x 7.5 x 2.41 |
Pb (Lead) Free | Exempt |
Pb Free Category | Gold Plate over compliant Undercoat-e4 |
MOQ | 1 |
Temp. Range | -55 to +125°C |
CAGE code | 34371 |
Control Mode | Voltage, Peak Current Mode |
Die Sale Availability? | Yes |
Duty Cycle (Max) (%) | 100 |
Flow | RH Hermetic |
Length (mm) | 20.3 |
Models Available | iSIM |
No-Load Operating Current | 25 |
Operating Freq (Max) (MHz) | 0.5 |
PROTO Availability? | Yes |
Phase of Outputs | In Phase |
Phases (Max) | 2 |
Qualification Level | EM |
Quiescent Current | 55µA |
Rating | Space |
SMD URL | |
Supply Voltage (max) (V) | 30 - 30 |
Supply Voltage (min) (V) | 12 - 12 |
Switching Frequency (max) (kHz) | 3000 |
Switching Frequency (min) (kHz) | 10 |
TID HDR (krad(Si)) | 300 |
Thickness (mm) | 2.41 |
Topology | Boost, Flyback, Forward, Full Bridge, Half Bridge, Push-Pull |
UVLO Rising (V) | 8.6 |
VDD1 (V) | 12 - 20 |
VREF (V) | 5.1 |
Width (mm) | 7.5 |
The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator. The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of <10mrad(Si)/s. Constructed with the Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance. The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50 °C to +125 °C.