Renesas Electronics Corporation
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RJU1C16JWS

Not Recommended for New DesignsNRND

1200V – 200A – Diode Chip

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RJU1C16JWS Datasheet

Overview

Renesas' automotive Fast Recovery Diode achieves low forward voltage and fast and soft recovery characteristics with its ultra-thin wafer and lifetime control technology.

This 1200V/200A Diode is optimized for high-power applications such as hybrid and electric vehicle drive inverters.
 

  • Fast Recovery Diode technology
  • Low Forward voltage (1.9V typ.)
  • AEC Q101 (HTRB) qualified

Documentation

Featured Documentation
Type Title Date
Datasheet
RJU1C16JWS Datasheet
Log in to Download PDF 122 KB
Application Note
IGBT, FRD Bonding Damage During Mounting
PDF 521 KB 日本語
Application Note
Power Device Bare Die/Wafer Products Handling Precautions
PDF 1.39 MB 日本語
Application Note
IGBT Usage Notes on Gate Drive
PDF 1.17 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Application Note
Usage Notes for Paralleled IGBT
PDF 941 KB 日本語
Application Note
IGBT Application Note
PDF 1.05 MB 日本語
7 items

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models
Type Title Date
Model - SPICE
RJU1C16JWS Ltspice Data
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1 item

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