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RJP1C15JWS

Not Recommended for New Designs

1200V - 200A - IGBT Chip

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RJP1C15JWS Datasheet

Overview

Renesas' AE4 IGBTs for automotive applications use a unique trench gate configuration in its process structure. These devices achieve low saturation voltage without sacrificing robustness and also have low switching losses. This 1200V/200A IGBT is optimized for high-power applications such as hybrid and electric vehicle drive inverters.

  • 1200V Trench & field stop AE4 technology 
  • Low collector to emitter saturation voltage (1.5V typ.)
  • Low Switching loss
  • Easy paralleling by internal Rg
  • AEC Q101 (HTRB, HTGB) qualified

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Models
Type Title Date
Model - SPICE
RJP1C15JWS Ltspice Data
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