Overview
Description
Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) feature an exclusive trench gate configuration in the process structure. These devices deliver faster switching performance compared to earlier IGBT generations and reduce conduction losses by lowering the saturation voltage.
The RBN40N65T1UFWA 650V/40A IGBT offers a low collector-to-emitter saturation voltage, making it suitable for power switching applications. It is available as an unsawn wafer.
Features
- Renesas generation 8th Trench IGBT
- Low collector to emitter saturation voltage
- High speed switching
- Unsawn wafer
- Wafer size = 200mm
- Quality grade: Standard
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 138 KB | |
| Application Note | PDF 521 KB 日本語 | |
| Application Note | PDF 881 KB 日本語 | |
| Application Note | PDF 712 KB 日本語 | |
| Application Note | PDF 842 KB | |
| Application Note | PDF 1.05 MB 日本語 | |
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Design & Development
Models
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