The Intersil Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus control in addition to the chip enable control. All bits are manufactured storing a logical 0 and can be selectively programmed for a logical 1 at any bit location.


  • QML Class T, per MIL-PRF-38535
  • Radiation performance
  • Gamma dose 1 x 105 RAD(Si)
  • No latch-up, SEU LET >100MeV/mg/cm2
  • Transient output upset >5 x 108 RAD (Si)/s
  • Fast access time - 35ns (Typical)
  • Single 5V power supply, synchronous operation
  • Single pulse 10V field programmable NiCr fuses
  • On-chip address latches, three-state outputs
  • Low standby current <500µA (Pre-Rad)
  • Low operating current <15mA/MHz
  • Electrically screened to SMD # 5962-95626




Type Title Date
Datasheet PDF 339 KB
Brochure PDF 5.02 MB
Brochure PDF 467 KB
White Paper PDF 533 KB
Product Advisory PDF 499 KB
Product Change Notice PDF 230 KB
Application Note PDF 338 KB
8 items

Design & Development