The F0552 provides 28dB gain and offers 47dB gain adjustment in 1dB steps designed to operate with a single 5V supply. Nominally, the device offers +46dBm Output IP3 using 455mA of ICC. Alternately, the device can be configured in low current (LC) mode to reduce power consumption to < 2 Watts.

This device is packaged in a 10 x 10 mm 68-VFQFPN with 50Ω single-ended RF input and 200Ω differential IF output impedances for ease of integration.


  • Dual path for MIMO systems
  • 28dB max power Gain
  • 47dB gain control range, 1dB steps
  • Ultra linear +46dBm OIP3
  • Low NF: 9.9dB at GMAX
  • Ultra high +19.5dBm OP1dB
  • Independent path standby mode
  • Constant LO impedance in STBY mode
  • 60MHz to 450MHz IF frequency range
  • Excellent 2 × 2, 3 × 3, IM2, 2nd Harmonic Rejection
  • ICC = 455mA STD Mode, 375mA LC Mode
  • 10 × 10 mm 68-VFQFPN package




Type Title Date
Datasheet PDF 1.51 MB
Guide PDF 2.24 MB
2 items

Design & Development

Boards & Kits

Boards & Kits


IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.