The F0480 RF VGA featuring Glitch-Free™ and Zero-Distortion™ technologies greatly reduces attenuation overshoot during attenuation state changes and provides +41 dBm OIP3 performance across a very wide bandwidth of 400 MHz to 2700 MHz at a typical current drain of 100mA. The device is internally matched so there is no need for optimizing with external matching components. Furthermore the device is internally matched so there is no need to optimize external matching elements.


  • 400 MHz – 2700 MHz; < 1 dB overshoot between gain transitions
  • 13 dB typical max gain
  • 23 dB gain range, 1 dB gain step resolution
  • Excellent linearity +41 dBm OIP3
  • Noise Figure 4 dB
  • ICC = 100 mA
  • 1.3 mA standby current
  • SPI interface
  • Broadband, Internally Matched




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Datasheet PDF 2.02 MB
Guide PDF 2.24 MB
Guide PDF 2.83 MB
Product Change Notice PDF 101 KB
Application Note PDF 520 KB
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IDT RF Product Benefits Overview

Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.

Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.

Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.

Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.

In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.