Evaluation Board for F1427 2.3GHz to 2.7GHz Frequency Band
The RTKA81F1427ST260RU is a fully populated evaluation board specifically designed to evaluate the frequency band of 2300MHz to 2700MHz for the F1427 high gain, high...
High Gain, High Linearity, 0.5W RF Driver Amplifier - 2300MHz to 4200MHz
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Overview
Description
The F1427 is a high-gain, high-linearity RF driver amplifier designed to operate within the 2300MHz to 4200MHz frequency band. Utilizing a single 5V power supply and 145mA of ICQ, the F1427 provides 35.5dB of gain and +28dBm OP1dB. Additionally, it supports fast on-off switching for TDD systems.
The F1427 is packaged in a 3mm × 3 mm, 16-VFQFPN package, with a differential 100Ω input and a single 50Ω output impedance for ease of integration into the signal path.
Features
- RF range: 2300MHz to 4200MHz
- 35.5dB typical gain
- +28dBm OP1dB at 2.6GHz
- 0.6dB max gain flatness across 100MHz BW
- 100Ω differential input and 50Ω single-ended output impedances
- 1.8V logic-compatible standby mode for power savings
- 5V power supply
- 145mA typical quiescent current consumption
- Operating temperature (TEP) range: -40 °C to +115 °C
- 3mm × 3 mm, 16-VFQFPN package
Comparison
Applications
Applications
- 5G sub-6GHz massive MIMO
- Wireless infrastructure base stations
- Frequency division duplex (FDD) or time division duplex (TDD) systems
- Point-to-point infrastructure
- Public safety infrastructure
- Military handhelds
- Repeaters and distributed antenna systems (DAS)
- General-purpose RF
Documentation
= Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 1.46 MB | |
| Guide | PDF 2.24 MB | |
| Brochure | PDF 5.35 MB 日本語 | |
| Product Brief | PDF 983 KB | |
| Product Brief | PDF 506 KB | |
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Design & Development
Boards & Kits
Boards & Kits
Evaluation Board for F1427 3.3GHz to 3.8GHz Frequency Band
The RTKA81F1427ST360RU is a fully populated evaluation board specifically designed to evaluate the frequency band of 3300MHz to 3800MHz for the F1427 high gain, high...
Featured Documents:
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Processing table
| VFQFPN | 16 | I | Yes | Tray | 1 | Get Samples, | |
| VFQFPN | 16 | I | Yes | Reel | 1 |
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Videos & Training
IDT RF Product Benefits Overview
Hello, my name is Dan Terlep. I'm a Product Definer in IDT's RF group. What I'm going to talk about are some of the customer benefits of IDT's technical innovations used in RF products. These are unique innovations that differentiate our products from competitive parts. Up to 10x improvement in RF performance can be obtained when using these devices in your designs. This technology is highly desired by equipment vendors and is protected by patents.
Glitch-free technology essentially eliminates the transient overshoot that can occur during mSv attenuation state transitions of standard digital step attenuators. Flat-noise technology maintains near constant noise performance [inaudible 00:00:48] reduced in our variable gain amplifiers, thus optimizing system level signal-to-noise performance. Zero-distortion technology practically eliminates intermodulation distortion in our RF mixers and amplifiers, enhancing the system's quality of service. Kz refers to constant impedance technology, which has implemented a new line of RF switches that allows 'hot switching' in TDD systems.
Additional benefits of using IDT's RF solutions include: enable screen networks with minimal power consumption; allow scaling from macrocells to microcells using the same device with reduced voltage, reduced current, or both; improves reliability by replacing gallium arsenite with silicon; improves data throughput by optimizing signal-to-noise performance and overall dynamic range; tolerates higher operating temperature than competitive devices.
Note that IDT's RF cards are used by all major cellular 3G and 4G equipment manufacturers for systems deployed all over the world. IDT's advanced RF portfolio using these technologies includes: mixers, digital step attenuators, RF switches, variable gain amplifiers, and modulators. These are silicon monolithic devices offered in QFN packages.
In summary, IDT's RF portfolio replaces gallium arsenite parts, results in higher reliability, provides better signal-to-noise performance, faster settling times, eliminates glitching and third-order intermodulation distortion, reduces DC power consumption, and operates at higher temperatures. Thank you for your time, and please make sure to visit IDT's RF website for a more complete look at our product portfolio. For additional information and support, please use the email shown.
Video List
News & Blog Posts
| News | Feb 28, 2019 | ||
| News | Dec 17, 2015 |
