Overview

Description

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
  • Low input capacitance Ciss = 5000 pF TYP.

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 1.32 MB
Application Note PDF 3.23 MB 日本語
Guide PDF 1.71 MB
Product Reliability Report PDF 224 KB
Brochure PDF 2.24 MB
5 items

Design & Development

Models

Models

Type Title Date
Model - SPICE ZIP
1 item