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The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
- Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
- Logic level drive type
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON