概要

Renesas' 8th-generation insulated-gate bipolar transistors (IGBTs) use an exclusive trench gate configuration in the process structure. These devices provide faster switching performance compared to previous IGBT generations. They also reduce conduction losses by decreasing the saturation voltage.

Our 1800V - 400A/200A IGBTs are optimized for high-power applications such as wind power generation and solar inverters.

  • Renesas 8th-generation trench IGBT
  • Short circuit withstands time (10µs min.)
  • Optimized for high-power application
  • Unsawn wafer 
  • Wafer size = 200mm
  • Quality grade: Standard

アプリケーション

  • Wind power generation
  • Solar inverters

ドキュメント

= ピックアップ
分類 タイトル 日時
データシート
RBN200N180S2HFWA Datasheet
PDF 311 KB
カタログ
Power Products Brochure
PDF 8.73 MB
アプリケーションノート
IGBT ゲート駆動に関する注意事項
PDF 1.28 MB 英語
アプリケーションノート
パワーMOSFET・IGBT 使用上の注意事項
PDF 633 KB 英語
ガイド
弊社の車載向けアナログ＆パワー製品に関しての使用上のご注意
PDF 596 KB
5 items

設計・開発

ECADモデル

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Diagram of ECAD Models

製品選択

    Processing table
    Pkg. Type
    ご購入 / サンプル
    型名
    RBN200N180S2HFWA-850#FF0
    circleアクティブ
    memory
    view_in_ar
    		Wafer
    RBN200N180S2HFWA-8F0#FF0
    circleアクティブ
    memory
    view_in_ar
    		Wafer
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