This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

Features

  • Logic level operation (4 to 6 V Gate drive)
  • High endurance capability against to the short circuit
  • Built-in the over temperature shutdown circuit
  • Latch type shutdown operation (Need 0 voltage recovery)

Product Options

Part Number Part Status Buy Sample
HAF2017L
Active
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
HAF2017(L) HAF2017(S) 日本語 Datasheet PDF 147 KB
Application Notes & White Papers
Power MOS FET APPLICATION NOTE 日本語 Application Note PDF 814 KB
PCNs & PDNs
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction) 日本語 Product Change Notice PDF 4.86 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 3.74 MB
Unification of a JEDEC tray and a embossed carrier tape for LQFP package 日本語 Product Change Notice PDF 1.46 MB
Other
Product Scout Automotive Brochure PDF 3.25 MB
PowerMOSFET & IPD Brochure PDF 2.24 MB
Renesas Semiconductor Lead-Free Packages Brochure PDF 1.32 MB