Overview

Description

The NP15P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 40 mΩ MAX. (VGS = −10 V, ID = −7.5 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.5 V, ID = −7.5 A)
  • Low input capacitance Ciss = 1100 pF TYP.
  • Built-in gate protection diode

Applications

Documentation

Document title Document type
Type
Date Date
PDF 1.41 MB Datasheet
PDF 3.23 MB 日本語 Application Note
PDF 2.24 MB Brochure
PDF 1.71 MB Guide
ZIP 1 KB Manual - Development Tools
PDF 224 KB Product Reliability Report
6 items

Design & Development

Models

Support