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Overview

Description

The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator. The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of <10mrad(Si)/s. Constructed with the Rad Hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance. The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50 °C to +125 °C.

Features

  • Electrically screened to DLA SMD# 5962-02511
  • QML qualified per MIL-PRF-38535 requirements
  • EH version is wafer-by-wafer acceptance tested to 50krad(Si) LDR
  • Oscillator frequency: 1MHz (max)
  • High output drive current: 1A peak (typ)
  • Low startup current: 300μA (max)
  • Undervoltage Lockout
  • Start threshold: 8.8V (max)
  • Stop threshold: 7.6V (min)
  • Hysteresis: 300mV (min)
  • Pulse-by-pulse current limiting
  • Programmable leading edge blanking
  • Radiation hardness
  • High Dose Rate (HDR) (50-300rad(Si)/s): 300krad(Si)
  • Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si)
  • Latch-up immune (dielectrically isolated)
  • SEU immune: LET= 35MeV•cm2/mg

Comparison

Applications

Documentation

Type Title Date
Datasheet PDF 630 KB
Brochure PDF 467 KB
Report PDF 626 KB
Application Note PDF 175 KB
Other
Report PDF 666 KB
Report PDF 3.96 MB
Application Note PDF 338 KB
Application Note PDF 224 KB
9 items

Design & Development

Models

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.

Diagram of ECAD Models

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