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72-Mbit DDRII+ SRAM 2-word Burst

Package Information

Pkg. Type LBGA
Pkg. Code pkg_6857
Lead Count (#) 165
Pkg. Dimensions (mm) 15 x 13 x 1.4

Environmental & Export Classifications

ECCN EAR99
RoHS (R1QHA7218ABB-25IB1) EnglishJapanese
Moisture Sensitivity Level (MSL) 3
Pb (Lead) Free Yes
HTSUS

Product Attributes

Pkg. Type LBGA
Carrier Type Tray
Architecture DDR-II+ CIO without ODT
Burst Length (Words) 2
Data Width (bits) 18000
Density (Kb) 72000
Frequency (Max) (MHz) 400
Lead Compliant No
Lead Count (#) 165
Length (mm) 15
MIN Frequency (MHz) 250
MOQ 1
Moisture Sensitivity Level (MSL) 3
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 15 x 13 x 1.4
Read Latency (Clock) 2
Tape & Reel No
Thickness (mm) 1.4
Width (mm) 13

Description

The R1Q#A7236 is a 2, 097, 152-word by 36-bit and the R1Q#A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.