Overview
Description
The RTK226110DE0010BU is an RAA226110 gate drive evaluation board. This evaluation kit consists of two GaN Systems 650V GaN Enhancement-mode HEMTs (E-HEMTs) and all necessary circuits including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. It allows users to easily evaluate the GaN E-HEMT performance in any half-bridge-based topology, either with the universal motherboard (P/N: GS665MB-EVB) or users’ own system design. The RTK226110DE0010BU board provides a 0V turn-off voltage solution. The 0V turn-off solution is normally used in low power applications and is easy to implement, as there is no need for a negative power supply rail.
Features
- Serves as a reference design and evaluation tool as well as a deployment-ready solution for easy in-system evaluation.
- Vertical mount style with a height of 35mm, which fits in the majority of 1U designs and allows for the evaluation of a GaN E-HEMT in a traditional through-hole type power supply board.
- Current shunt position for switching characterization testing.
- Universal form factor and footprint for all products.
- 0V turn-off voltage.
Applications
Documentation
Log in required to subscribe
|
|
|
---|---|---|
Type | Title | Date |
Manual - Development Tools | PDF 1.59 MB | |
1 item
|
Design & Development
Product Options
Applied Filters: