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RBA250N10CHPF-4UA02

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Nch Power MOSFET 100V 250A 2.4mohm TO-263-7 / D2PAK-7 for Automotive

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RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive

Overview

The RBA250N10CHPF-4UA02 is N-channel MOS Field Effect Transistor designed for high current switching applications.

  • Super low on-state resistance
    • RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 125A)
  • Low input capacitance
    • Ciss = 9500pF TYP. (VDS = 50 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Pb-free (This product does not contain Pb in the external electrode)

Documentation

Featured Documentation
Type Title Date
Datasheet
RBA250N10CHPF-4UA02 100V – 250A – N-channel Power MOS FET Application : Automotive
PDF 659 KB
Guide
Power Discrete Mount Pad
PDF 796 KB
Application Note
Power MOSFET Application Note
PDF 3.23 MB 日本語
Application Note
Attention of Handling Semiconductor Devices
PDF 648 KB 日本語
Brochure
Power MOSFET & IPD
PDF 2.24 MB
5 items

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