Overview

Description

The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
  • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Documentation

Title Type Date
PDF230 KB
Datasheet
PDF3.23 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide
PDF222 KB
Product Reliability Report

Design & Development

Models

Support