The radiation hardened IS-1715ARH and IS-1715AEH are high-speed, high current, complementary power FET drivers designed for use in synchronous rectification circuits. Soft switching transitions for the two output waveforms can be managed by setting the independently programmable delays. Alternatively, the delay pins can be configured for zero-voltage sensing to allow for precise switching control. The IS-1715ARH and IS-1715AEH have a single input, which is PWM and TTL compatible, and can run at frequencies up to 1MHz. The AUX output switches immediately at the rising edge of the INPUT, but waits for the T2 delay before responding to the falling edge. A logic low on the enable pin (ENBL) places both outputs into an active-low mode, and an Undervoltage Lockout (UVLO) function is set at 9V (maximum). These devices are constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process and are immune to Single Event Latch-Up (SEL). They have been specifically designed to provide highly reliable performance in harsh radiation environments.


  • Electrically Screened to SMD # 5962-00521
  • QML qualified per MIL-PRF-38535 requirements
  • Radiation environment
  • Gamma dose 3x105rad(Si)
  • Latch-up immune
  • PWR output current (source and sink): 3A (peak)
  • AUX output current (source and sink): 3A (peak)
  • Low operating supply current: 6mA (max)
  • Wide programmable delay range: 100ns to 600ns
  • Configurable for zero-voltage switching
  • Switching frequency to 1MHz
  • Both outputs active-low in Sleep mode
  • 9V (maximum) UVLO




Design & Development