This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
|Datasheet||PDF 323 KB 日本語|
|Brochure||PDF 5.51 MB 日本語|
|Brochure||PDF 6.61 MB|
|Application Note||PDF 3.23 MB 日本語|
|Application Note||PDF 648 KB 日本語|
|Product Change Notice||
Unification of a JEDEC tray and a embossed carrier tape for LQFP package (Additional Information & Correction)PDF 4.86 MB 日本語
|Brochure||PDF 2.24 MB|
|Product Change Notice||PDF 3.74 MB 日本語|
|Product Change Notice||PDF 1.46 MB 日本語|
|Brochure||PDF 1.32 MB|
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