This FET has the over temperature shut-down capability sensing to the junction temperature.  This FET has the built-in over temperature shut-down circuit in the gate area.  And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..


  • Logic level operation (–6 V Gate drive).
  • Built-in the over temperature shut-down circuit
  • High endurance capability against to the short circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • AEC-Q101 Rev-E Compliant




Type Title Date
Datasheet PDF 323 KB 日本語
Brochure PDF 5.51 MB 日本語
Brochure PDF 6.61 MB
Application Note PDF 3.23 MB 日本語
Application Note PDF 648 KB 日本語
Product Change Notice PDF 4.86 MB 日本語
Brochure PDF 2.24 MB
Product Change Notice PDF 3.74 MB 日本語
Product Change Notice PDF 1.46 MB 日本語
Brochure PDF 1.32 MB
10 items

Design & Development