Overview

Description

NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
  • Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON dual

Documentation

Title Type Date
PDF561 KB
Datasheet
PDF3.23 MB日本語
Application Note
PDF2.24 MB
Brochure
PDF1.71 MB
Guide
PDF222 KB
Product Reliability Report

Design & Development

Models

Support