Overview
Description
NP29N06QDK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 30 mΩ MAX. (VGS = 4.5 V, ID = 7.5 A)
- Low Ciss: Ciss = 1000 pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON dual
Comparison
Applications
Documentation
Featured Documentation
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| Type | Title | Date |
| Datasheet | PDF 561 KB | |
| Guide | PDF 796 KB | |
| Application Note | PDF 3.23 MB 日本語 | |
| Product Reliability Report | PDF 222 KB | |
| Application Note | PDF 648 KB 日本語 | |
| Brochure | PDF 2.24 MB | |
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Design & Development
Models
ECAD Models
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.
Product Options
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