概要
説明
The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The ISL70040SEH operates with a supply voltage from 4. 5V to 13. 2V and has both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4. 5V gate drive voltage (VDRV) generated using an internal regulator which prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs. The gate drive voltage also features an undervoltage lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14. 7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed independently by adding additional impedance to the turn-on/off paths. The ISL70040SEH and ISL73040SEH operate across the military temperature range from -55°C to +125°C and are offered in an 8 Ld hermetically sealed ceramic Surface Mount Device (SMD) package or die form.
特長
- Wide operating voltage range of 4.5V to 13.2V
- Up to 14.7V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Optimized to drive enhancement mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Independent outputs for adjustable turn-on/turn-off speeds
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
- Radiation hardness assurance (wafer-by-wafer)
- High Dose Rate (HDR) (50-300rad(Si)/s): 100krad(Si) (ISL70040SEH only)
- Low Dose Rate (LDR) (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (refer to the ISL70040SEH, ISL73040SEH SEE Report for details)
- No SEB/L LETTH, VDD = 14.7V: 86MeV•cm2/mg
- No SET, LETTH, VDD = 13.2V: 86MeV•cm2/mg
- Electrically screened to DLA SMD 5962-17233
製品比較
アプリケーション
設計・開発
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iSim:PEオフラインシミュレーションツール iSim Personal Edition(iSim:PE)は、プロジェクトの早い段階で設計サイクルを速め、プロジェクト初期のリスクを低減し、現在のみならず次世代の設計に耐えうる部品を選定します。
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Simulator | ルネサス |
1件
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ボード&キット
Evaluation Board for the ISL70040SEH and ISL70023SEH (100V GaN FET)
The ISL70040SEHEV2Z evaluation platform evaluates the ISL70040SEH alongside the ISL70023SEH. The same board can be used to evaluate the ISL73040SEH alongside the ISL73023SEH, which are the same die offered with different radiation assurance screening.
The ISL70040SEH is designed to drive...
Evaluation Board for the ISL70040SEH and ISL70024SEH (200V GaN FET)
The ISL70040SEHEV3Z evaluation platform is designed to evaluate the ISL70040SEH radiation hardened low side GaN FET driver alongside the ISL70023SEH and ISL70024SEH enhancement mode GaN power transistors.
The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in...
耐放射線ローサイドGaN FETドライバおよびGaN FET
ISL73040SEHEV4Z評価ボードは、ISL73040SEHローサイドGaNドライバとISL73024SEH 200V GaN FETを使用してハーフブリッジパワーステージを構築する方法を示します。ISL73040SEHは、4.5Vゲートドライブ電圧(VDRV)で動作します。これはゲート電圧が、ISL73024SEHを構成するGaN FETの最大ゲートソース定格を超えることを防止する、内部レギュレータを使用して生成されます。ISL73024SEHは、7.5Aのドレイン電流に対応する200V GaN FETです。
Evaluation Board for the ISL70040SEH and ISL70020SEH (40V GaN FET)
The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH alongside the ISL70020SEH. The ISL70040SEH is designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The board operates across a supply range of 4.5V to...
Power Management Reference Design for AMD Versal XQRVC1902
The ISLVERSALDEMO2Z demo board provides the power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' Radiation Hardened Power Management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The...
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