IGBT 1250V 200A Wafer
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ECADモデルを調べる
概要
特長
- Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Tc = 25°C)
- High-Speed switching
- Short circuit withstands time (10 μs min.)
設計・開発
モデル
ECADモデル
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製品選択
Processing table
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- Document icon next to product name in row: View the featured document for this product
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