概要

説明

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .

特長

  • Logic level operation.
  • Built-in the over temperature shut-down circuit and current limitation circuit.
  • High endurance capability against to the short circuit.
  • Temperature hysteresis type.
  • High density mounting
  • Power supply voltage applies 12 V and 24 V. ( Max Power supply voltage : 38 V )
  • AEC-Q101 Compliant

製品比較

アプリケーション

ドキュメント

設計・開発

モデル