概要
説明
The NP35N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
特長
- Low on-state resistance RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 17.5 A)
- Low Ciss: Ciss = 1900 pF TYP. (VDS = 25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
製品比較
アプリケーション
ドキュメント
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| 分類 | タイトル | 日付 |
| データシート | PDF 224 KB | |
| アプリケーションノート | PDF 2.65 MB 英語 | |
| ガイド | PDF 1.71 MB | |
| 製品別信頼性資料 | PDF 223 KB | |
| カタログ | PDF 2.24 MB | |
| ガイド | PDF 596 KB | |
6 items
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設計・開発
モデル
ECADモデル
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Processing table
| HSON | Power SON-8 5x6 | Embossed Tape | サンプルを入手, | |
| HSON | Power SON-8 5x6 | Embossed Tape |
Tips for Using This Parametric Table:
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