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The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)
  • Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V)
  • Logic level drive type
  • Designed for automotive application and AEC-Q101 qualified
  • Small size package 8-pin HSON

Product Options

Part Number Part Status Pkg. Type Carrier Type Buy Sample
NP33N06YDG-E1-AY
Active HSON Embossed Tape
Availability
NP33N06YDG-E2-AY
Active HSON Embossed Tape
Availability

Documentation & Downloads

Title Other Languages Type Format File Size Date
Datasheets & Errata
NP33N06YDG Data Sheet Datasheet PDF 223 KB
User Guides & Manuals
Power Devices Part Number Guide Guide PDF 1.89 MB
Other
PowerMOSFET & IPD Brochure PDF 2.24 MB