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R1LV1616HBG

Obsolete

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)

R1LV1616HBG-I DatasheetEOL plan of R1LV1616H series with development of alternative products (Revised)

Overview

The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword × 16-bit with embedded ECC. R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.

  • Single 3.0 V supply: 2.7 V to 3.6 V
  • Fast access time: 45/55 ns (max)
  • Power dissipation
    -Active: 9 mW/MHz (typ)
    -Standby: 1.5 μW (typ)
  • Completely static memory.
    -No clock or timing strobe required
  • Equal access and cycle times
  • Common data input and output.
    -Three state output
  • Battery backup operation.
    -2 chip selection for battery backup
  • Temperature range: -40 to +85°C
  • Embedded ECC (error checking and correction) for single-bit error correction

Documentation

Design & Development

ECAD Models

Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on the CAD Model links in the Product Options table. If a symbol or model isn't available, it can be requested directly from SamacSys.

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Diagram of ECAD Models

Models
Type Title Date
Model - IBIS
IBIS models (Low Power SRAM) HM62V16100LBPI R1LV1616HBG
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1 item

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