Radiation Hardened Driver-GaN Power Stage with 100V GaN FET Evaluation Board
The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V...
The ISL73033SLHM is a radiation hardened 100V GaN FET with integrated Low-Side GaN FET driver. The GaN FET are capable of providing up to 45A output and have a RDSON as low as 7.5mΩ. The integrated Low-Side GaN FET driver has a supply range from 4.5V to 13.2V and can accept logic levels up to 14.7V, regardless of supply voltage. The ISL73033SLHM has propagation delay of 42ns, enabling high switching frequency for better power conversion efficiency. The ISL73033SLHM is characterized over the full military temperature range from -55°C to +125°C and receives screening similar to QMLV devices. The ISL73033SLHM is offered in a 81 lead Ball Grid Array (BGA) plastic package.
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PDF 467 KB | Datasheet | |
PDF 4.85 MB | Brochure | |
PDF 229 KB | Technical Brief | |
PDF 1.31 MB | Report | |
PDF 484 KB | Report | |
PDF 470 KB 日本語 | White Paper | |
PDF 548 KB | White Paper | |
PDF 533 KB | White Paper | |
PDF 338 KB | Application Note | |
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The ISL73033SLHEV1Z evaluation board is used to evaluate the performance of the ISL73033SLH radiation hardened Driver-GaN power stage. The ISL73033SLH integrates a 4.5V...
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